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Power MOSFET 150°C(TJ) N channels TO-247

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MPN R6020KNZ4C13
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A-R6020KNZ4C13
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 150°C(TJ) N channels TO-247

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
working temperature 150°C(TJ)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
technology MOSFET (Metal Oxide)
FET type N channels
Leakage source voltage (Vdss) 600V
Input capacitance (Ciss) at different Vds (maximum value) 1550pF @ 25V
Package/Enclosure TO-247
Current at 25 ° C - Continuous Drain (Id) 20A(Tc)
Vgs (th) (maximum value) for different IDs 5V @ 1mA
Power dissipation (maximum value) 231W(Tc)
What is the gate charge at different Vgs? (Qg) (maximum value) 40nC @ 10V
Vgs (maximum value) ±20V
On resistance at different Id and Vgs (maximum value) 196 milliohms @ 9.5A, 10V
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