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Universal MOSFET TO-236-3,SC-59,SOT-23-3 SuperSOT

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    MPN NDS332P
    Mfr. ON Semiconductor
    Oneyac # A3-NDS332P
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-236-3,SC-59,SOT-23-3 Package/Enclosure : SuperSOT

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    Datasheet

    No Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Continuous drain current Id 1A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 2.7V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 195pF @ 10V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 500mW(Ta)
    Rds On(Max)@Id,Vgs 300m Ohms@1.1A,4.5V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    Package/Enclosure SuperSOT
    FET type P-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 1A
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 195pF @ 10V
    Power Rating 500mW(Ta)
    Rds On(Max)@Id,Vgs 300 milliohms @ 1.1A, 4.5V
    working temperature -55°C ~ 150°C(TJ)
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