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Small signal MOSFET SOT-23 TO-236-3,SC-59,SOT-23-3

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    MPN FDV303N
    Mfr. ON Semiconductor
    Oneyac # A3-FDV303N
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23 Package/Enclosure : TO-236-3,SC-59,SOT-23-3 Power Rating : 350mW(Ta) Operating temperature : -55°C~150°C(TJ) Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Continuous Drain Current Id 680mA(Ta)
    Rds On(Max)@Id,Vgs 450m Ohms@500mA,4.5V
    Package/Enclosure SOT-23
    Gate Charge (Qg) at Different Vgs (Maximum) 2.3nC @ 4.5V
    Pd-power dissipation (Max) 350mW(Ta)
    Power Rating 350mW(Ta)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    Input capacitance (Ciss) at different Vds (maximum) 50pF @ 10V
    Vgs (th) (maximum) at different Ids 1.5V @ 250µA
    Continuous Drain Current Id 0.68A
    Drive voltage @Rds On (Max), Rds On (Min) 2.7V,4.5V
    fet type N-Channel
    Drain-source voltage Vds 25V
    Rds On(Max)@Id,Vgs 450 milliohms @ 500mA, 4.5V
    Gate Charge (Qg) at Different Vgs (Maximum) 2.3nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum) 50pF @ 10V
    Gate voltage Vgs ±8V
    Operating temperature -55°C~150°C(TJ)
    Vgs (th) (maximum) at different Ids 1.5V @ 250µA
    Operating temperature -55°C ~ 150°C(TJ)
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