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Power MOSFET Power 8-PowerTDFN

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    MPN FDMS86200
    Mfr. ON Semiconductor
    Oneyac # A3-FDMS86200
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : Power Package/Enclosure : 8-PowerTDFN

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series PowerTrench®
    Drive voltage @ Rds On (Max), Rds On (Min) 6V,10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 46nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2715pF @ 75V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2.5W(Ta),104W(Tc)
    Rds On(Max)@Id,Vgs 18m Ohms@9.6A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure Power
    FET type N-Channel
    Drain source voltage Vds 150V
    Continuous drain current Id 9.6A
    Continuous drain current Id 9.6A(Ta),35A(Tc)
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 46nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2715pF @ 75V
    Power Rating 2.5W(Ta),104W(Tc)
    Rds On(Max)@Id,Vgs 18 milliohms @ 9.6A, 10V
    working temperature -55°C ~ 150°C(TJ)
    Package/Enclosure 8-PowerTDFN
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 75V
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