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隔离器芯片 DIP 4-DIP

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    MPN FOD817A300W
    Mfr. ON Semiconductor
    Oneyac # A3-FOD817A300W
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DIP Package/Enclosure : 4-DIP

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    Specifications FAQ

    Description Details Operation
    Product Category 隔离器芯片
    Voltage-Isolation 5000Vrms
    Operating temperature -55°C ~ 110°C
    Current transfer ratio (minimum) 80% @ 5mA
    Voltage-isolated 5000Vrms
    Typical fall time 3µs
    Current-Output / Channel 50mA
    Current-DC Forward (If) 50mA
    Voltage-Forward (Vf) (typical) 1.2V
    Number of channels 1 Ohms
    Isolation voltage 5000 V AC
    Package/Enclosure DIP
    Current transfer ratio (maximum) 160% @ 5mA
    Number of channels 1 Ohms
    Number of needles 4
    Rise / fall time (typical) 4µs,3µs
    Vce saturation value (maximum) 200mV
    Installation type Through-Hole Mounting
    Maximum forward voltage 1.4V
    Voltage-Output (Max) 70V
    Typical rise time 4µs
    Output type Transistor
    Input type DC
    Output device Phototransistor
    Voltage-Forward (Vf) (typical) 1.2V
    Vce saturation value (maximum) 200mV
    Input current 50 mA
    Voltage-Output (Max) 70V
    Current-DC Forward (If) 50mA
    Package/Enclosure 4-DIP
    Input current type DC
    Maximum current transfer ratio 160%
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    A : Please carefully check the product model information before placing the order. If the order is wrongly ordered due to your own reasons, we will not accept the return or replacement requirements.If the product quantity is wrong, the model is inconsistent, and the product quality problem occurs, please be sure to keep the original packaging and label, and contact us within two weeks to apply for return.

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    When unpacking without original label and tray!
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    Min. 1 Mult. 1