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Small signal MOSFET ±8V 350mW(Ta) 4Ω@400mA,4.5V -55°C~150°C(TJ) SOT-23 N-Channel 25V 0.5A 220mA(Ta) 4 ohms @ 400mA, 4.5V -55°C ~ 150°C(TJ) TO-236-3,SC-59,SOT-23-3

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MPN FDV301N
Mfr. ON Semiconductor
Oneyac # A3-FDV301N
Supplier Oneyac
Unleaded/RoHs Details in the datasheet
Description ±8V 350mW(Ta) 4Ω@400mA,4.5V -55°C~150°C(TJ) SOT-23 N-Channel 25V 0.5A 220mA(Ta) 4 ohms @ 400mA, 4.5V -55°C ~ 150°C(TJ) TO-236-3,SC-59,SOT-23-3

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Datasheet

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Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Small signal MOSFET
Drive voltage @ Rds On (Max), Rds On (Min) 2.7V,4.5V
Vgs (th) at different IDs (maximum value) 1.06V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 0.7nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 9.5pF @ 10V
Gate voltage Vgs ±8V
Pd power dissipation (Max) 350mW(Ta)
Rds On(Max)@Id,Vgs 4Ω@400mA,4.5V
working temperature -55°C~150°C(TJ)
Package/Enclosure SOT-23
FET type N-Channel
Drain source voltage Vds 25V
Continuous drain current Id 0.5A
Continuous drain current Id 220mA(Ta)
Vgs (th) at different IDs (maximum value) 1.06V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 0.7nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 9.5pF @ 10V
Power Rating 350mW(Ta)
Rds On(Max)@Id,Vgs 4 ohms @ 400mA, 4.5V
working temperature -55°C ~ 150°C(TJ)
Package/Enclosure TO-236-3,SC-59,SOT-23-3
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