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Universal MOSFET TO-263-3,D²Pak,TO-263AB D2PAK TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN FDB52N20TM
    Mfr. ON Semiconductor
    Oneyac # A3-FDB52N20TM
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3,D²Pak,TO-263AB Package/Enclosure : D2PAK Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Series UniFET™
    Continuous drain current Id 52A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 63nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2900pF @ 25V
    Gate voltage Vgs ±30V
    Pd power dissipation (Max) 357W(Tc)
    Rds On(Max)@Id,Vgs 49m Ohms@26A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-263-3,D²Pak,TO-263AB
    Package/Enclosure D2PAK
    FET type N-Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 52A
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 63nC
    Input capacitance (Ciss) at different Vds (maximum value) 2900pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Power Rating 357W(Tc)
    Rds On(Max)@Id,Vgs 49 milliohms @ 26A, 10V
    working temperature -55°C ~ 150°C(TJ)
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
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