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Power MOSFET SOT-223 TO-261-4,TO-261AA

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    MPN NDT2955
    Mfr. ON Semiconductor
    Oneyac # A-NDT2955
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-223 Package/Enclosure : TO-261-4,TO-261AA

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 601pF @ 30V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 3W(Ta)
    Rds On(Max)@Id,Vgs 300m Ohms@2.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-223
    FET type P-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 2.5A
    Continuous drain current Id 2.5A(Ta)
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 601pF @ 30V
    Power Rating 3W(Ta)
    Rds On(Max)@Id,Vgs 300 milliohms @ 2.5A, 10V
    working temperature -55°C ~ 150°C(TJ)
    Package/Enclosure TO-261-4,TO-261AA
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