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Universal MOSFET TO-220-3 TO-220AB

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    MPN FDP61N20
    Mfr. ON Semiconductor
    Oneyac # A-FDP61N20
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3 Package/Enclosure : TO-220AB Series : UniFET™

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    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Series UniFET™
    Continuous drain current Id 61A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 75nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3380pF @ 25V
    Gate voltage Vgs ±30V
    Pd power dissipation (Max) 417W(Tc)
    Rds On(Max)@Id,Vgs 41m Ohms@30.5A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-220-3
    Package/Enclosure TO-220AB
    FET type N-Channel
    Drain source voltage Vds 200V
    Continuous drain current Id 61A
    Vgs (th) at different IDs (maximum value) 5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 75nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3380pF @ 25V
    Power Rating 417W
    Rds On(Max)@Id,Vgs 41 milliohms @ 30.5A, 10V
    working temperature -55°C ~ 150°C(TJ)
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