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Darlington transistor SC-88

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    MPN MUN5212DW1T1G
    Mfr. ON Semiconductor
    Oneyac # A-MUN5212DW1T1G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SC-88

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    Specifications FAQ

    Description Details Operation
    Product Category Darlington transistor
    FET type 2 NPN pre biased (dual)
    Resistors - emitter substrate (R2) (ohms) 22k
    DC current gain (hFE) at different Ic and Vce (minimum value) 60 @ 5mA,10V
    Vce saturation value (maximum value) at different Ib and Ic values 250mV @ 300µA,10mA
    Current collector cutoff (maximum value) 500nA
    FET type NPN
    Maximum allowable collector current Ic 100mA
    Collector emitter breakdown voltage VCEO 50V
    Vce saturation value (maximum value) at different Ib and Ic values 250mV @ 300µA,10mA
    Current collector cutoff (maximum value) 500nA
    Current collector (Ic) (maximum value) 100mA
    Voltage emitter breakdown (maximum value) 50V
    Resistors - emitter substrate (R2) (ohms) 22k
    DC current gain (hFE) at different Ic and Vce (minimum value) 60 @ 5mA,10V
    Package/Enclosure SC-88
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