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Small signal MOSFET SOT-23 TO-236-3,SC-59,SOT-23-3

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    MPN FDV303N
    Mfr. ON Semiconductor
    Oneyac # A-FDV303N
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23 Package/Enclosure : TO-236-3,SC-59,SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 2.7V,4.5V
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 2.3nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 50pF @ 10V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 350mW(Ta)
    Rds On(Max)@Id,Vgs 450m Ohms@500mA,4.5V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23
    FET type N-Channel
    Drain source voltage Vds 25V
    Continuous drain current Id 0.68A
    Continuous drain current Id 680mA(Ta)
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 2.3nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 50pF @ 10V
    Power Rating 350mW(Ta)
    Rds On(Max)@Id,Vgs 450 milliohms @ 500mA, 4.5V
    working temperature -55°C ~ 150°C(TJ)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
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