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General MOSFET TO-263-3, D²Pak (2-lead + tab), TO-263AB TO-263-3,D²Pak,TO-263AB D2PAK

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    MPN FQB55N10TM
    Mfr. ON Semiconductor
    Oneyac # A-FQB55N10TM
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D²Pak (2-lead + tab), TO-263AB Package/Enclosure : TO-263-3,D²Pak,TO-263AB Package/Enclosure : D2PAK Power Rating : 3.75W(Ta),155W(Tc)

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category General MOSFET
    Input capacitance (Ciss) at different Vds (maximum) 2730pF @ 25V
    Rds On(Max)@Id,Vgs 26m Ohms@27.5A,10V
    Continuous Drain Current Id 55A(Tc)
    Gate Charge (Qg) at Different Vgs (Maximum) 98nC @ 10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 98nC @ 10V
    Series QFET®
    Operating temperature -55°C ~ 175°C(TJ)
    Input capacitance (Ciss) at different Vds (maximum) 2730pF @ 25V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Pd-power dissipation (Max) 3.75W(Ta),155W(Tc)
    Operating temperature -55°C~175°C(TJ)
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Gate voltage Vgs ±25V
    Package/Enclosure TO-263-3, D²Pak (2-lead + tab), TO-263AB
    fet type N-Channel
    Package/Enclosure TO-263-3,D²Pak,TO-263AB
    Rds On(Max)@Id,Vgs 26 milliohms @ 27.5A, 10V
    Drain-source voltage Vds 100V
    Power Rating 3.75W(Ta),155W(Tc)
    Continuous Drain Current Id 55A
    Package/Enclosure D2PAK
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