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Universal MOSFET SOIC-8

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    MPN SI4425BDY-T1-E3
    Mfr. Vishay
    Oneyac # A-SI4425BDY-T1-E3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Series TrenchFET®
    FET type P-Channel
    Continuous drain current Id 8.8A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 100nC @ 10V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 1.5W(Ta)
    Rds On(Max)@Id,Vgs 12m Ohms@11.4A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    Drain source voltage Vds 30V
    Continuous drain current Id 8.8A
    Rds On(Max)@Id,Vgs 12mΩ
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