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Universal MOSFET SOT-23-3

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    MPN SI2333DS-T1-E3
    Mfr. Vishay
    Oneyac # A-SI2333DS-T1-E3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Series TrenchFET®
    FET type P-Channel
    Continuous drain current Id 4.1A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 18nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 1100pF @ 6V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 750mW(Ta)
    Rds On(Max)@Id,Vgs 32m Ohms@5.3A,4.5V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-23-3
    Drain source voltage Vds 12V
    Continuous drain current Id 4.1A
    Rds On(Max)@Id,Vgs 32mΩ
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