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IGBT transistor TO220F

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    MPN AOTF5B60D
    Mfr. AOS
    Authorized Distributor
    Oneyac # A-AOTF5B60D
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO220F

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 14A
    Pulse current collector (Icm) 20A
    Vce (on) at different Vge and Ic 1.8V @ 15V, 5A
    Power Rating 31.2W
    Switching energy 140 µ J (on), 40 µ J (off)
    Input type standard
    Td (on/off) value at 25 ° C 12ns/83ns
    Test conditions 400V, 5A, 60 ohms, 15V
    Reverse recovery time (trr) 98ns
    working temperature -55°C ~ 150°C(TJ)
    Turn off switch energy 0.04mJ
    Closing time 95ns
    Packaging type Pipe
    install THT
    Package/Enclosure TO220F
    Turn on switch energy 0.14mJ
    Opening time 27ns
    FET type IGBT
    Gate emitter voltage ±20V
    consume power 12.5W
    Pulse collector current 20A
    Collector emitter voltage 600V
    collector-emitter saturation voltage 1.55V
    Collector current 5A
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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