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Power MOSFET SOIC-8

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    MPN SQ4850EY-T1_GE3
    Mfr. Vishay
    Oneyac # A-SQ4850EY-T1_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : Automotive grade, AEC-Q101, TrenchFET ®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series Automotive grade, AEC-Q101, TrenchFET ®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 30nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1250pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 6.8W(Tc)
    working temperature -55°C~175°C(TJ)
    Package/Enclosure SOIC-8
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 12A
    Rds On(Max)@Id,Vgs 22mΩ@6A,5V
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    In Stock :  15,000 Lead Time:27W

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 2500)

    2,500+ $0.5199 $1,299.75

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 5~7 Working Days
    Min. 2,500 Mult. 2,500

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