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Power MOSFET SOT-223

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    MPN DMN10H220LE-13
    Mfr. Diodes Incorporated
    Oneyac # A3-DMN10H220LE-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-223

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 8.3nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 401pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 1.8W(Ta)
    Rds On(Max)@Id,Vgs 220mΩ@1.6A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-223
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 2.3A
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    In Stock :  5,000

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