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Power MOSFET SOT-223

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    MPN ZXMN6A09GTA
    Mfr. Diodes Incorporated
    Oneyac # A3-ZXMN6A09GTA
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    ZXMN6A09G Series 60 V 0.04 Ohm N-Channel Enhancement Mode MOSFET - SOT-223

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 24.2nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 1407pF @ 40V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2W(Ta)
    Rds On(Max)@Id,Vgs 40mΩ@8.2A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-223
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 7.5A
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