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Power MOSFET TO-263

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    MPN SQM120P04-04L_GE3
    Mfr. Vishay
    Oneyac # A-SQM120P04-04L_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series Automotive grade, AEC-Q101, TrenchFET ®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 330nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 13980pF @ 20V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 375W(Tc)
    working temperature -55°C~175°C(TJ)
    Package/Enclosure TO-263
    FET type P-Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 6mΩ
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    In Stock :  0 Lead Time:20W

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