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Power MOSFET Tube TO-220-3

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    MPN FCPF850N80Z
    Mfr. ON Semiconductor
    Oneyac # A3-FCPF850N80Z
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : Tube Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Ciss - Input capacitor 990 pF
    Continuous drain current Id 6 A
    Package/Enclosure Tube
    FET type N-Channel
    Minimum operating temperature - 55 C
    Maximum operating temperature + 150 C
    Standard disconnect delay time 40 ns
    Pd - Power consumption 28.4 W
    to configure Single
    Qg - Gate Charging 22 nC
    Rds On(Max)@Id,Vgs 850 m0hms
    Drain source voltage Vds 800 V
    Gate voltage Vgs 20V
    Gate voltage Vgs 4.5 V
    rise time 10 ns
    Descent time 4.5 ns
    Drain source voltage Vds 800V
    Continuous drain current Id 6A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4.5V @ 600µA
    Gate charge (Qg) at different Vgs (maximum value) 29nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1315pF @ 100V
    Pd power dissipation (Max) 28.4W(Tc)
    Rds On(Max)@Id,Vgs 850mΩ@3A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-220-3
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