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General Purpose Transistors 3-SSOT SuperSOT SOT-23

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    MPN FSB660A
    Mfr. ON Semiconductor
    Oneyac # A-FSB660A
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 3-SSOT Package/Enclosure : SuperSOT Package/Enclosure : SOT-23

    Specifications FAQ

    Description Details Operation
    Product Category General Purpose Transistors
    Vce saturation value (maximum value) at different Ib and Ic values 300mV @ 200mA,2A
    Current collector cutoff (maximum value) 100nA(ICBO)
    DC current gain (hFE) at different Ic and Vce (minimum value) 250 @ 500mA,2V
    Power Rating 1/2W
    Frequency - Transition 75MHz
    working temperature -55°C ~ 150°C(TJ)
    Package/Enclosure 3-SSOT
    Package/Enclosure SuperSOT
    Type of transistor P-Channel
    Maximum allowable collector current Ic 2A
    Collector emitter breakdown voltage VCEO 60V
    Package/Enclosure SOT-23
    Power dissipation Pd 500mW
    Type of transistor PNP
    Maximum collector emitter voltage VCEO -60V
    Collector continuous current -2A
    Collector emitter saturation voltage -300mV
    DC current gain hFE 250
    Characteristic frequency fT 75MHz
    VEBO -5V
    VCBO -60V
    working temperature -55℃~150℃
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