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Power MOSFET TO-252

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    MPN SQD50P04-13L_GE3
    Mfr. Vishay
    Oneyac # A3-SQD50P04-13L_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 90nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3590pF @ 20V
    working temperature -55°C~175°C(TJ)
    Package/Enclosure TO-252
    Continuous drain current Id 50A
    Pd power dissipation (Max) 136W
    QG gate charge 80nC
    Rds On(Max)@Id,Vgs 10mΩ
    Drain source voltage Vds 40V
    Gate voltage Vgs 2.5V
    rise time 12ns
    Descent time 16ns
    Typical shutdown delay time 40ns
    Typical connection delay time 10ns
    width 6.22mm
    Forward transconductance - minimum value 61S
    Series SQ
    Number of channels 1Channel
    to configure Single
    length 6.73mm
    height 2.38mm
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    In Stock :  0 Lead Time:20W

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