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Power MOSFET SO-8

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    MPN DMG4822SSD-13
    Mfr. Diodes Incorporated
    Oneyac # A3-DMG4822SSD-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SO-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 10A
    Pd power dissipation (Max) 1.42W
    QG gate charge 10.5nC
    Rds On(Max)@Id,Vgs 20mΩ
    Drain source voltage Vds 30V
    Gate voltage Vgs 25V
    rise time 7.9ns
    Descent time 3.1ns
    Typical shutdown delay time 14.6ns
    Typical connection delay time 2.9ns
    Package/Enclosure SO-8
    Forward transconductance - minimum value 200mS
    Series DMG4822
    Number of channels 2Channel
    to configure Dual
    working temperature -55°C~150°C
    FET type N-Channel
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