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Small signal MOSFET SOT-363

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    MPN DMG1016UDW-7
    Mfr. Diodes Incorporated
    Oneyac # A3-DMG1016UDW-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N & P-Channel 20 V 450 mOhm Enhancement Mode Mosfet

    Specifications FAQ

    Description Details Operation
    Product Category Small signal MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 0.74nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 60.67pF @ 10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOT-363
    Continuous drain current Id 1.066A,845mA
    Pd power dissipation (Max) 330mW
    QG gate charge 736.6nC,622.4pC
    Rds On(Max)@Id,Vgs 450mΩ@600mA,4.5V
    Drain source voltage Vds 20V
    Gate voltage Vgs ±6V
    rise time 7.4ns,8.1ns
    Descent time 12.3ns,20.72ns
    Typical shutdown delay time 26.7ns,28.4ns
    Typical connection delay time 5.1ns,5.1ns
    Series DMG1016
    Number of channels 2Channel
    to configure Dual
    FET type N+P-Channel
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