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Power MOSFET SOP

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    MPN DMN2009LSS-13
    Mfr. Diodes Incorporated
    Oneyac # A-DMN2009LSS-13
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOP

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,10V
    Vgs (th) at different IDs (maximum value) 1.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 58.3nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2555pF @ 10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOP
    Continuous drain current Id 12A
    Pd power dissipation (Max) 2W
    Rds On(Max)@Id,Vgs 8mΩ
    Drain source voltage Vds 20V
    Gate voltage Vgs 12V
    width 4.25mm
    Series DMN2009
    Number of channels 1Channel
    to configure SingleQuadDrainTripleSource
    length 4.6mm
    height 0.56mm
    FET type N-Channel
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