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Power MOSFET SO-8

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    MPN SQ9945BEY-T1_GE3
    Mfr. Vishay
    Oneyac # A-SQ9945BEY-T1_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SO-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 470pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 5.4A
    Pd power dissipation (Max) 4W
    QG gate charge 12nC,12nC
    Rds On(Max)@Id,Vgs 45mΩ
    Drain source voltage Vds 60V
    Gate voltage Vgs 1.5V
    rise time 2.8ns,2.8ns
    Descent time 1.7ns,1.7ns
    Typical shutdown delay time 17ns,17ns
    Typical connection delay time 6ns,6ns
    width 3.9mm
    Package/Enclosure SO-8
    Forward transconductance - minimum value 12S,12S
    Series SQ
    Number of channels 2Channel
    to configure Dual
    length 4.9mm
    height 1.75mm
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    In Stock :  0 Lead Time:17W

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