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Power MOSFET TO-263-3

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    MPN SQM40P10-40L_GE3
    Mfr. Vishay
    Oneyac # A-SQM40P10-40L_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 134nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5295pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 40A
    Pd power dissipation (Max) 150W
    QG gate charge 134nC
    Rds On(Max)@Id,Vgs 33mΩ
    Drain source voltage Vds 100V
    Gate voltage Vgs 2.5V
    rise time 10ns
    Descent time 20ns
    Typical shutdown delay time 63ns
    Typical connection delay time 10ns
    width 9.65mm
    Package/Enclosure TO-263-3
    Forward transconductance - minimum value 47S
    Series SQ
    Number of channels 1Channel
    to configure Single
    length 10.67mm
    height 4.83mm
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