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Power MOSFET SO-8

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    MPN SI4062DY-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI4062DY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SO-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.6V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 60nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3175pF @ 30V
    Continuous drain current Id 32.1A
    Pd power dissipation (Max) 7.8W
    QG gate charge 40nC
    Rds On(Max)@Id,Vgs 4.2mΩ
    Drain source voltage Vds 60V
    Gate voltage Vgs 1.4V
    rise time 6ns
    Descent time 8ns
    Typical shutdown delay time 34ns
    Typical connection delay time 16ns
    Package/Enclosure SO-8
    Forward transconductance - minimum value 80S
    Series SI4
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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    In Stock :  0 Lead Time:34W

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