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Power MOSFET TO-220-3

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    MPN IRF100B201
    Mfr. Infineon
    Oneyac # A-IRF100B201
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    IRF100B201 Series 100 V 4.2 mOhm Flange Mount HEXFET® Power Mosfet - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure TO-220-3
    FET type N-Channel
    Rds On(Max)@Id,Vgs 4.2mΩ@115A,10V
    Pd power dissipation (Max) 441W
    working temperature -55°C~175°C
    Gate voltage Vgs ±20V
    Drain source voltage Vds 100V
    Continuous drain current Id 192A
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    In Stock :  1,808 Lead Time:14W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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