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Power MOSFET 8-SO

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    MPN SI4435DYTRPBF
    Mfr. Infineon
    Oneyac # A-SI4435DYTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SO

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 60nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 2320pF @ 15V
    Pd power dissipation (Max) 2.5W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 60nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2320pF @ 15V
    Rds On(Max)@Id,Vgs 20mΩ@8A,10V
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 8A
    Package/Enclosure 8-SO
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