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Power MOSFET ±20V 2.5W(Ta) -55°C~150°C(TJ) 20mΩ@8A,10V P-Channel 30V 8A 8-SO

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MPN SI4435DYTRPBF
Mfr. Infineon
Oneyac # A-SI4435DYTRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description ±20V 2.5W(Ta) -55°C~150°C(TJ) 20mΩ@8A,10V P-Channel 30V 8A 8-SO

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Vgs (th) at different IDs (maximum value) 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 60nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 2320pF @ 15V
Pd power dissipation (Max) 2.5W(Ta)
working temperature -55°C~150°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 60nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 2320pF @ 15V
Rds On(Max)@Id,Vgs 20mΩ@8A,10V
FET type P-Channel
Drain source voltage Vds 30V
Continuous drain current Id 8A
Package/Enclosure 8-SO
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