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Power Mosfet SOT-223

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    MPN IRLL024ZTRPBF
    Mfr. Infineon
    Oneyac # A-IRLL024ZTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 55 V 2.8 W 7 nC Hexfet Power Mosfet Surface Mount - SOT-223-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) at different Vds (maximum) 380pF @ 25V
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 25V
    Vgs (th) (maximum) at different Ids 3V @ 250µA
    Input capacitance (Ciss) at different Vds (maximum) 380pF @ 25V
    Operating temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drain-source voltage Vds 55V
    Pd-power dissipation (Max) 1W(Ta)
    Continuous Drain Current Id 5A
    Rds On(Max)@Id,Vgs 60mΩ@3A,10V
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 5V
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) (maximum) at different Ids 3V @ 250µA
    fet type N-Channel
    Gate voltage Vgs ±16V
    Package/Enclosure SOT-223
    Gate Charge (Qg) at Different Vgs (Maximum) 11nC @ 5V
    Gate Charge (Qg) at Different Vgs (Maximum) 11nC @ 5V
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