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Power Mosfet TO-263-3

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    MPN IRFS4227TRLPBF
    Mfr. Infineon
    Oneyac # A-IRFS4227TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 200 V 26 mOhm 98 nC 330 W Surface Mount Mosfet - TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) at different Vds (maximum) 4600pF @ 25V
    Rds On(Max)@Id,Vgs 26mΩ@46A,10V
    Input capacitance (Ciss) at different Vds (maximum) 4600pF @ 25V
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 10V
    Vgs (th) (maximum) at different Ids 5V @ 250µA
    Operating temperature -40°C~175°C(TJ)
    Series HEXFET®
    Gate voltage Vgs ±30V
    fet type N-Channel
    Gate Charge (Qg) at Different Vgs (Maximum) 98nC @ 10V
    Vgs (th) (maximum) at different Ids 5V @ 250µA
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 25V
    Continuous Drain Current Id 62A
    Package/Enclosure TO-263-3
    Gate Charge (Qg) at Different Vgs (Maximum) 98nC @ 10V
    Pd-power dissipation (Max) 330W(Tc)
    Drain-source voltage Vds 200V
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