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Power MOSFET N-Channel 100V 3.2A(Ta),20A(Tc) ±20V 2.8W(Ta),29W(Tc) 115mΩ@6.3A,10V -55°C~150°C(TJ) PQFN 3.3X3.3 8L

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MPN IRFHM3911TRPBF
Mfr. Infineon
Oneyac # A-IRFHM3911TRPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description N-Channel 100V 3.2A(Ta),20A(Tc) ±20V 2.8W(Ta),29W(Tc) 115mΩ@6.3A,10V -55°C~150°C(TJ) PQFN 3.3X3.3 8L

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
FET type N-Channel
Drain source voltage Vds 100V
Continuous drain current Id 3.2A(Ta),20A(Tc)
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 4V @ 35µA
Gate charge (Qg) at different Vgs (maximum value) 26nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 760pF @ 50V
Pd power dissipation (Max) 2.8W(Ta),29W(Tc)
Rds On(Max)@Id,Vgs 115mΩ@6.3A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure PQFN 3.3X3.3 8L
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In Stock :  4,000 Lead Time:12W

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