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Power MOSFET D2PAK

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    MPN IRF9540NSTRLPBF
    Mfr. Infineon
    Oneyac # A-IRF9540NSTRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 100 V 117 mOhm 110 nC 3.1 W Surface Mount Mosfet - TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 110nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1450pF @ 25V
    Pd power dissipation (Max) 3.1W(Ta),110W(Tc)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 110nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1450pF @ 25V
    Rds On(Max)@Id,Vgs 117mΩ@14A,10V
    FET type P-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 23A
    Package/Enclosure D2PAK
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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    In Stock :  800 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 800 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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