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Power MOSFET ±20V 150W(Tc) -55°C~175°C(TJ) 150mΩ@11A,10V N-Channel 200V 18A TO-263

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MPN IRF640NSTRLPBF
Mfr. Infineon
Oneyac # A-IRF640NSTRLPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description ±20V 150W(Tc) -55°C~175°C(TJ) 150mΩ@11A,10V N-Channel 200V 18A TO-263

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Vgs (th) at different IDs (maximum value) 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 67nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1160pF @ 25V
Pd power dissipation (Max) 150W(Tc)
working temperature -55°C~175°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 67nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 1160pF @ 25V
Rds On(Max)@Id,Vgs 150mΩ@11A,10V
FET type N-Channel
Drain source voltage Vds 200V
Continuous drain current Id 18A
Package/Enclosure TO-263
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In Stock :  0 Lead Time:18W

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