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Power MOSFET ±20V 3.8W(Ta),110W(Tc) -55°C~175°C(TJ) 290mΩ@6.6A,10V P-Channel 150V 13A D2PAK

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MPN IRF6215STRLPBF
Mfr. Infineon
Oneyac # A-IRF6215STRLPBF
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description Single P-Channel 150 V 0.58 Ohm 66 nC 3.8 W Surface Mount Mosfet - TO-263-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFET
Vgs (th) at different IDs (maximum value) 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 66nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 860pF @ 25V
Pd power dissipation (Max) 3.8W(Ta),110W(Tc)
working temperature -55°C~175°C(TJ)
Series HEXFET®
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 66nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 860pF @ 25V
Rds On(Max)@Id,Vgs 290mΩ@6.6A,10V
FET type P-Channel
Drain source voltage Vds 150V
Continuous drain current Id 13A
Package/Enclosure D2PAK
Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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