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Power MOSFET 

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    MPN IRF3610STRLPBF
    Mfr. Infineon
    Oneyac # A-IRF3610STRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 150nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5380pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 103A
    Rds On(Max)@Id,Vgs 11.6mΩ
    Minimum gate threshold voltage 2V
    pin number 3
    category Power MOSFET
    Pd power dissipation (Max) 333W
    Forward transconductance 110S
    Forward diode voltage 1.3V
    Number of components per chip 1 Ohms
    width 9.65mm
    Series HEXFET
    Typical shutdown delay time 77 ns
    Typical connection delay time 15 ns
    height 4.83mm
    length 10.67mm
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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