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Power MOSFET D2PAK

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    MPN IRF2804STRLPBF
    Mfr. Infineon
    Oneyac # A-IRF2804STRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 40 V 330 W 160 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 240nC
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 6450pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Pd power dissipation (Max) 300W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 240nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 6450pF @ 25V
    Rds On(Max)@Id,Vgs 2mΩ@75A,10V
    FET type N-Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 280A
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Package/Enclosure D2PAK
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