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RF transistor BFR193L3E6327XTMA1

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    MPN BFR 193L3 E6327
    Other # BFR193L3E6327XTMA1
    Mfr. Infineon
    Oneyac # A-BFR 193L3 E6327
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category RF transistor
    DC current gain (hFE) at different Ic and Vce (minimum value) 70 @ 30mA,8V
    Current collector (Ic) (maximum value) 80mA
    working temperature 150°C(TJ)
    Voltage emitter breakdown (maximum value) 12V
    Frequency - Transition 8GHz
    Noise figure (dB, typical values at different f values) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
    gain 12.5dB ~ 19dB
    Series BFR193L3
    Emitter base voltage VEBO 2V
    to configure Single
    Collector base voltage VCBO 20V
    Maximum value of direct current gain hFE 70at30mAat8V
    height 1mm
    length 2.9mm
    working frequency 8000MHz
    width 1.3mm
    Maximum DC collector current 0.08A
    FET type NPN
    Collector emitter maximum voltage VCEO 12V
    Power Rating 0.58W
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