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RF transistor BFR193E6327HTSA1

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    MPN BFR 193 E6327
    Other # BFR193E6327HTSA1
    Mfr. Infineon
    Oneyac # A-BFR 193 E6327
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category RF transistor
    DC current gain (hFE) at different Ic and Vce (minimum value) 70 @ 30mA,8V
    Current collector (Ic) (maximum value) 80mA
    working temperature 150°C(TJ)
    FET type NPN
    Voltage emitter breakdown (maximum value) 12V
    Frequency - Transition 8GHz
    Noise figure (dB, typical values at different f values) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
    gain 10dB ~ 15dB
    Power Rating 0.58W
    Series BFR193
    DC collector/Base Gain hfe Min 70
    Emitter base voltage VEBO 2V
    Collector continuous current 0.08A
    to configure Single
    Collector base voltage VCBO 20V
    Maximum value of direct current gain hFE 70at30mAat8V
    height 1mm
    length 2.9mm
    working frequency 8000MHz
    width 1.3mm
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