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Power MOSFET 

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    MPN AUIRLR3410TR
    Mfr. Infineon
    Oneyac # A-AUIRLR3410TR
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    AUIRLR3410 Series 100 V 105 mOhm Surface Mount HEXFET® Power MOSFET - TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 34nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 5V
    Input capacitance (Ciss) at different Vds (maximum value) 800pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    working temperature -55°C~175°C(TJ)
    Number of channels 1Channel
    Continuous drain current Id 17A
    Rds On(Max)@Id,Vgs 105mΩ
    Gate voltage Vgs 16V
    to configure SingleQuintSource
    Pd power dissipation (Max) 79W
    height 2.3mm
    length 6.5mm
    FET type N-Channel
    width 6.22mm
    Forward transconductance - minimum value 7.7S
    Descent time 26ns
    rise time 53ns
    Typical shutdown delay time 30ns
    Typical connection delay time 7.2ns
    Drain source voltage Vds 100V
    QG gate charge 34nC
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