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Power MOSFET TO-220AB

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    MPN IRF40B207
    Mfr. Infineon
    Oneyac # A-IRF40B207
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    IRF40B207 Series 40 V 4.5 mOhm Flange Mount HEXFET® Power Mosfet - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 3.9V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 68nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 2110pF @ 25V
    Pd power dissipation (Max) 83W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®,StrongIRFET™
    Drive voltage @ Rds On (Max), Rds On (Min) 6V,10V
    Vgs (th) at different IDs (maximum value) 3.9V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 68nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2110pF @ 25V
    Rds On(Max)@Id,Vgs 4.5mΩ@57A,10V
    FET type N-Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 95A
    Package/Enclosure TO-220AB
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