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Power MOSFET IPT059N15N3ATMA1

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    MPN IPT059N15N3
    Other # IPT059N15N3ATMA1
    Mfr. Infineon
    Oneyac # A-IPT059N15N3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 150V
    Continuous drain current Id 155A
    Rds On(Max)@Id,Vgs 5.9mΩ
    Gate voltage Vgs 10V
    QG gate charge 69nC
    to configure Single
    Pd power dissipation (Max) 375W
    height 2.4mm
    length 10.58mm
    Series OptiMOS3
    FET type N-Channel
    width 10.1mm
    Forward transconductance - minimum value 86S
    Descent time 14ns
    rise time 35ns
    Typical shutdown delay time 46ns
    Typical connection delay time 25ns
    working temperature -55°C~175°C
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