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Universal MOSFET IPT012N08N5ATMA1 TO-Leadless (HSOF-8)

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    MPN IPT012N08N5
    Other # IPT012N08N5ATMA1
    Mfr. Infineon
    Oneyac # A-IPT012N08N5
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-Leadless (HSOF-8) Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Moisture Level 1 Ohms
    Rds On(Max)@Id,Vgs 1.2mΩ
    Drain source voltage Vds 80V
    Continuous drain current Id 300A
    Package/Enclosure TO-Leadless (HSOF-8)
    Rth 0.4K/W
    QG 178.0nC
    Budgetary Price €/1k 2.94
    working temperature -55.0°C
    Ptot max 375.0W
    FET type N-Channel
    Pin Count 8.0Pins
    RthJA max 62.0K/W
    Coss 2000.0pF
    Ciss 13000.0pF
    Gate voltage Vgs 2.2V,3.8V
    Series OptiMOS™
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