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Power MOSFET IPP052NE7N3GXKSA1

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    MPN IPP052NE7N3 G
    Other # IPP052NE7N3GXKSA1
    Mfr. Infineon
    Oneyac # A-IPP052NE7N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS3

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 80A
    Rds On(Max)@Id,Vgs 5.2mΩ
    Gate voltage Vgs 20V
    QG gate charge 51nC
    to configure Single
    Pd power dissipation (Max) 150W
    height 15.65mm
    length 10mm
    Series OptiMOS3
    width 4.4mm
    Forward transconductance - minimum value 103S,52S
    Descent time 8ns
    rise time 11ns
    Typical shutdown delay time 30ns
    Typical connection delay time 14ns
    working temperature -55°C~175°C
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