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Power MOSFET IPP041N12N3GXKSA1

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    MPN IPP041N12N3 G
    Other # IPP041N12N3GXKSA1
    Mfr. Infineon
    Oneyac # A-IPP041N12N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 13800pF @ 60V
    working temperature -55°C~175°C(TJ)
    Drain source voltage Vds 120V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 270µA
    Gate charge (Qg) at different Vgs (maximum value) 211nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 3.5mΩ
    Gate voltage Vgs 20V
    QG gate charge 211nC
    to configure Single
    Pd power dissipation (Max) 300W
    height 15.65mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 83S
    Descent time 21ns
    rise time 52ns
    Typical shutdown delay time 70ns
    Typical connection delay time 35ns
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