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Power Mosfet IPD35N10S3L26ATMA1

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    MPN IPD35N10S3L-26
    Other # IPD35N10S3L26ATMA1
    Mfr. Infineon
    Oneyac # A-IPD35N10S3L-26
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Operating temperature : -55°C~175°C

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Qg-gate charge 30nC
    Configuration Single
    Operating temperature -55°C~175°C
    Pd-power dissipation (Max) 71W
    width 6.22mm
    Continuous Drain Current Id 35A
    Drain-source voltage Vds 100V
    Rise Time 4ns
    Typical off delay time 18ns
    Typical on-delay time 6ns
    Rds On(Max)@Id,Vgs 24mΩ
    length 6.5mm
    Series OptiMOS-T
    height 2.3mm
    Number of channels 1Channel
    fet type N-Channel
    Gate voltage Vgs 10V
    Fall time 3ns
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