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Power MOSFET IPD320N20N3GATMA1 DPAK (TO-252)

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    MPN IPD320N20N3 G
    Other # IPD320N20N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPD320N20N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DPAK (TO-252)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    QG gate charge 29nC
    to configure Single
    Pd power dissipation (Max) 136W
    height 2.3mm
    length 6.5mm
    width 6.22mm
    Forward transconductance - minimum value 28S
    Descent time 4ns
    rise time 9ns
    Typical shutdown delay time 21ns
    Typical connection delay time 11ns
    Moisture Level 1 Ohms
    Rds On(Max)@Id,Vgs 32mΩ
    Drain source voltage Vds 200V
    Continuous drain current Id 34A
    QG (typ @10V) 22.0 nC
    Package/Enclosure DPAK (TO-252)
    Rth 1.1 K/W
    Budgetary Price €/1k 0.8
    Ptot max 136.0W
    FET type N-Channel
    Coss 135.0pF
    Ciss 1770.0 pF
    Gate voltage Vgs 3V,2V,4V
    working temperature -55°C~175°C
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