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Power MOSFET IPB17N25S3100ATMA1

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    MPN IPB17N25S3-100
    Other # IPB17N25S3100ATMA1
    Mfr. Infineon
    Oneyac # A-IPB17N25S3-100
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : IPB17N25

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 250V
    Continuous drain current Id 17A
    Rds On(Max)@Id,Vgs 100mΩ
    Gate voltage Vgs 10V
    QG gate charge 14nC
    to configure Single
    Pd power dissipation (Max) 107W
    height 4.4mm
    length 10mm
    Series IPB17N25
    FET type N-Channel
    width 9.25mm
    Descent time 1.2ns
    rise time 3.7ns
    Typical shutdown delay time 7.5ns
    Typical connection delay time 4.4ns
    working temperature -55°C~175°C
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