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Power MOSFET IPB144N12N3GATMA1

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    MPN IPB144N12N3 G
    Other # IPB144N12N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB144N12N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : IPB144N12

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    107 W Pd - Power consumption
    Series IPB144N12
    Descent time 4 nS
    rise time 9 nS
    Standard packaging quantity 1000
    corporate name OptiMOS
    Standard disconnect delay time 24 nS
    to configure Single
    37 nC Qg - Gate Charging
    Number of channels 1Channel
    Drain source voltage Vds 120V
    Continuous drain current Id 56A
    Rds On(Max)@Id,Vgs 12.3mΩ
    Gate voltage Vgs 20V
    QG gate charge 49nC
    Pd power dissipation (Max) 107W
    height 4.4mm
    length 10mm
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 31S
    Typical shutdown delay time 24ns
    Typical connection delay time 16ns
    working temperature -55°C~175°C
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